45 46 47 48 49 50 51 52 53 750 800 850 900 950 1000 product description stanford microdevices sxl-316 amplifier is a high efficiency gaas heterojunction bipolar transistor (hbt) mmics housed in low-cost surface-mountable ceramic package. these hbt mmics are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. these amplifiers are specially designed for use as driver devices for infrastructure equipment in the 800-970 mhz cellular, ism and narrowband pcs. its high linearity make it an ideal choice for multi-carrier as well as digital applications. sxl-316 800-970 mhz 50 ohm power amplifier module product features ? patented high reliability gaas hbt technology ? high 3rd order intercept : +52dbm typ. at 850 mhz ? surface-mountable power plastic package applications ? multi-carrier systems ? basestation applications lobmys snoitidnoctset:sretemara p: z 0 zhm079-008=f,smho05= stinu .nim .pyt .xam p bd1 noisserpmocbd1tarewoptuptuo zhm088-028=f zhm079-008=f mbd mbd 0.1 30 .23 0.13 s 12 niagrewo pz hm079-008= fb d0 .41 ea py cneiciffededdarewop zhm088-028=f zhm079-008=f % % 44 04 rws vr wsvtupni zhm088-028=f 9-008= f7z hm0 - 1:5.1 1:0.2 rws vr wsvtuptuo zhm088-028=f zhm079-008=f - 1:5.1 1:5.2 pi 3 tnioptpecretniredrodriht zhm088-028=f zhm079-008=f mbd mb d6 4 25 84 i d tnerrucecive dv 5+=c va m0 27 electrical specifications at ta = 25c the information provided herein is believed to be reliable at press time. stanford microdevices assumes no responsibility for inaccuracies or omissions. stanford microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. prices and specifications are subject to change without notice. no patent rights or licenses to any of the circuits described herein are implied or granted to any third party. stanford microdevices does not authorize or warrant any stanford microdevices product for use in life-support devices and/or systems. copyright 1998 stanford microdevices, inc. all worldwide rights reserved. 522 almanor ave., sunnyvale, ca 94086 phone: (800) smi-mmic http://www.stanfordmicro.com output third order intercept point vs. frequency mhz dbm sxl-224 800-970 mhz power mmic amplifier preliminary 1
-60 -50 -40 -30 -20 -10 0 10 20 30 750 8 00 850 9 00 950 1 000 -30 -25 -20 -15 -10 -5 0 750 8 00 850 9 00 950 1 000 28 33 38 43 48 820 850 880 910 940 970 gain and isolation vs. frequency output power and efficiency vs. frequency sxl-316 800-970 mhz power mmic amplifier 522 almanor ave., sunnyvale, ca 94086 phone: (800) smi-mmic http://www.stanfordmicro.com mhz t ypical performance at 25 c (vc = 5.0v , ic=720ma) 2 s21 db s12 db input & output return loss vs. frequency mhz s22 db s11 db pout dbm eff % preliminary
third order intercept point vs. output tone power ref 24.0 dbm #at 20 db mkr -10.00 mhz -62.05 db log 10db/ center 850.00 mhz span 50.00 mhz tone power= +19dbm, ip3 = +50dbm 522 almanor ave., sunnyvale, ca 94086 phone: (800) smi-mmic http://www.stanfordmicro.com 3 sxl-316 800-970 mhz power mmic amplifier sxl-224 800-970 mhz power mmic amplifier preliminary
522 almanor ave., sunnyvale, ca 94086 phone: (800) smi-mmic http://www.stanfordmicro.com 4 application schematic and bias circuit for 900 mhz operation rebmuntra pl eerrepsecive de zisleer 1rt-613-lx s0 0 5" 31 2rt-613-lx s0 00 1" 31 klb-613-lx sy art/00 1- part number ordering information erutarepmetdael noitcnuj erutarepmet )srh(fttm c52 +c 68 +0 00,000,01> c06 +c 121 +0 00,000,1> c58 +c 641 +0 00,005 mttf vs. temperature @ id = 720ma thermal resistance (lead-junction): 30 c/w absolute maximum ratings notes: 1. operation of this device above any one of these parameters may cause permanent damage. retemarap etulosba mumixam egatlovecive dv 7 tnerrucecive da m0001 noitapissidrewo pw m0006 rewoptupnif rw m001 erutarepmetnoitcnu jc 571+ erutarepmetgnitarep oc 58+otc54- erutarepmetegarot sc 571+otc56- sxl-316 evaluation board (p/n sxl-316eb) sxl-316 800-970 mhz power mmic amplifier preliminary
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